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Image Search Results
Journal: Coatings
Article Title: SiGeSn Quantum Dots in HfO2 for Floating Gate Memory Capacitors
doi: 10.3390/coatings12030348
Figure Lengend Snippet: Figure 3. Raman spectra: (a,b) as-deposited and RTA samples M1 and M2, respectively; (c,d) normalized spectra of annealed structures M1 and M2, respectively plotted in the 270–310 cm−1 region corresponding to Ge-Ge mode in SiGeSn NCs.
Article Snippet: Our approach for QDs-based NVM capacitors consists of magnetron sputtering deposition (Surrey Nanosystems Gamma 1000 equipment, Surrey NanoSystems Ltd., Newhaven, UK) of 3-layer stacks of gate HfO2/SiGeSn-HfO2/tunnel HfO2/p-Si followed by nanostructuring using
Techniques: